Invention Grant
- Patent Title: Method of forming a modified layer in a substrate
- Patent Title (中): 在基材中形成改性层的方法
-
Application No.: US12270649Application Date: 2008-11-13
-
Publication No.: US07927974B2Publication Date: 2011-04-19
- Inventor: Yosuke Watanabe , Kenji Furuta , Kiyoshi Ohsuga
- Applicant: Yosuke Watanabe , Kenji Furuta , Kiyoshi Ohsuga
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greer, Burns & Crain, Ltd
- Priority: JP2007-315932 20071206
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
First, mapping data storing interrupted areas is obtained. In a first modified-layer forming step, before a stacked article is stacked on a front surface of a substrate, a laser beam is directed to the interrupted areas based on the mapping data to form modified layers only at the interrupted areas. After the stacked articles have been stacked on the substrate, in a second modified-layer forming step, the laser beam is directed at least to the predetermined dividing line formed with no modified layer in the first modified-layer forming step to form a modified layer.
Public/Granted literature
- US20090149002A1 METHOD OF FORMING A MODIFIED LAYER IN A SUBSTRATE Public/Granted day:2009-06-11
Information query
IPC分类: