公开(公告)号：US07927974B2

公开(公告)日：2011-04-19

申请号：US12270649

申请日：2008-11-13

申请人： Yosuke Watanabe ,  Kenji Furuta ,  Kiyoshi Ohsuga

发明人： Yosuke Watanabe ,  Kenji Furuta ,  Kiyoshi Ohsuga

IPC分类号： H01L21/00

CPC分类号： B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/78

摘要： First, mapping data storing interrupted areas is obtained. In a first modified-layer forming step, before a stacked article is stacked on a front surface of a substrate, a laser beam is directed to the interrupted areas based on the mapping data to form modified layers only at the interrupted areas. After the stacked articles have been stacked on the substrate, in a second modified-layer forming step, the laser beam is directed at least to the predetermined dividing line formed with no modified layer in the first modified-layer forming step to form a modified layer.

摘要翻译： 首先，获得存储中断区域的映射数据。 在第一改质层形成工序中，在堆叠制品层叠在基板的正面上之前，基于映射数据将激光束导向到中断区域，仅在中断区域形成修饰层。 在层叠的物品堆叠在基板上之后，在第二改质层形成工序中，在第一改质层形成工序中，至少将激光束指向不具有改性层的规定的分割线，形成修饰层 。

公开(公告)号：US20090149002A1

公开(公告)日：2009-06-11

申请号：US12270649

申请日：2008-11-13

申请人： Yosuke Watanabe ,  Kenji Furuta ,  Kiyoshi Ohsuga

发明人： Yosuke Watanabe ,  Kenji Furuta ,  Kiyoshi Ohsuga

IPC分类号： H01L21/268

CPC分类号： B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/78

摘要： First, mapping data storing interrupted areas is obtained. In a first modified-layer forming step, before a stacked article is stacked on a front surface of a substrate, a laser beam is directed to the interrupted areas based on the mapping data to form modified layers only at the interrupted areas. After the stacked articles have been stacked on the substrate, in a second modified-layer forming step, the laser beam is directed at least to the predetermined dividing line formed with no modified layer in the first modified-layer forming step to form a modified layer.

摘要翻译： 首先，获得存储中断区域的映射数据。 在第一改质层形成工序中，在堆叠制品层叠在基板的正面上之前，基于映射数据将激光束导向到中断区域，仅在中断区域形成修饰层。 在层叠的物品堆叠在基板上之后，在第二改质层形成工序中，在第一改质层形成工序中，至少将激光束指向不具有改性层的规定的分割线，形成修饰层 。

公开(公告)号：US07483115B2

公开(公告)日：2009-01-27

申请号：US11499688

申请日：2006-08-07

申请人： Koichi Shigematsu ,  Satoshi Kobayashi ,  Kiyoshi Ohsuga

发明人： Koichi Shigematsu ,  Satoshi Kobayashi ,  Kiyoshi Ohsuga

IPC分类号： G02F1/13

CPC分类号： G02F1/133351 ,  B23K26/40 ,  B23K26/53 ,  B23K26/57 ,  B23K2103/172 ,  B23K2103/50 ,  G02F2001/133368

摘要： A method of laser processing a liquid crystal device wafer which is formed by laminating together a silicon substrate and a glass substrate, and has liquid crystal devices in respective rectangular areas sectioned by streets arranged in a lattice pattern on the front surface, the method comprising: a first deteriorated layer forming step for forming a deteriorated layer along the streets in the inside of the silicon substrate by applying a laser beam of a wavelength capable of passing through the silicone substrate and forming a deteriorated layer in the inside of the silicon substrate from the glass substrate side with its focal point set to the inside of the silicon substrate; and a second deteriorated layer forming step for forming a deteriorated layer along the streets in the inside of the glass substrate by applying a laser beam of a wavelength capable of passing through the glass substrate and forming a deteriorated layer in the inside of the glass substrate with its focal point set to the inside of the glass substrate.

摘要翻译： 1.一种激光处理液晶装置晶片的方法，所述液晶装置晶片是通过将硅基板和玻璃基板层压在一起形成的，并且在前表面上以格子状布置的街道划分的各个矩形区域中具有液晶装置，所述方法包括： 第一劣化层形成步骤，通过施加能够穿过硅氧烷基底的波长的激光束在硅衬底的内部沿着街道形成劣化层，并从硅衬底的内部形成劣化层 玻璃基板侧，其焦点设置在硅基板的内部; 以及第二劣化层形成步骤，用于通过施加能够穿过玻璃基板的波长的激光束在玻璃基板的内部沿着街道形成劣化层，并在玻璃基板的内部形成劣化层， 其焦点设置在玻璃基板的内部。

公开(公告)号：US20120061361A1

公开(公告)日：2012-03-15

申请号：US13223941

申请日：2011-09-01

申请人： Satoshi Usuda ,  Kiyoshi Ohsuga ,  Masaru Nakamura

发明人： Satoshi Usuda ,  Kiyoshi Ohsuga ,  Masaru Nakamura

IPC分类号： B23K26/38

CPC分类号： B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50

摘要： A method of dividing a workpiece includes: forming a pre-machining alteration region in the inside of a region in which no device is formed; detecting the position of the pre-machining alteration region on through infrared imaging by imaging means, to thereby recognize a deviation between the pre-machining alteration region and a planned dividing line as machining position correction information; and forming a main machining alteration region by utilizing the machining position correction information, whereby the workpiece can be accurately divided along the planned dividing lines into individual devices.

摘要翻译： 分割工件的方法包括：在不形成装置的区域的内部形成预加工变更区域; 通过成像装置通过红外成像检测预加工变更区域的位置，从而将预加工变更区域与计划分割线之间的偏差识别为加工位置校正信息; 并通过利用加工位置校正信息形成主加工变更区域，由此可以将工件沿着规划的分割线精确地划分为单独的装置。

公开(公告)号：US08476553B2

公开(公告)日：2013-07-02

申请号：US13223941

申请日：2011-09-01

申请人： Satoshi Usuda ,  Kiyoshi Ohsuga ,  Masaru Nakamura

发明人： Satoshi Usuda ,  Kiyoshi Ohsuga ,  Masaru Nakamura

IPC分类号： B23K26/38

CPC分类号： B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50

摘要： A method of dividing a workpiece includes: forming a pre-machining alteration region in the inside of a region in which no device is formed; detecting the position of the pre-machining alteration region through infrared imaging by imaging means, to thereby recognize a deviation between the pre-machining alteration region and a planned dividing line as machining position correction information; and forming a main machining alteration region by utilizing the machining position correction information, whereby the workpiece can be accurately divided along the planned dividing lines into individual devices.

摘要翻译： 分割工件的方法包括：在不形成装置的区域的内部形成预加工变更区域; 通过成像装置通过红外成像来检测预加工变更区域的位置，从而将预加工变更区域与计划分割线之间的偏差识别为加工位置校正信息; 并通过利用加工位置校正信息形成主加工变更区域，由此能够将工件沿着规划的分割线精确地划分成单独的装置。

公开(公告)号：US20070035692A1

公开(公告)日：2007-02-15

申请号：US11499688

申请日：2006-08-07

申请人： Koichi Shigematsu ,  Satoshi Kobayashi ,  Kiyoshi Ohsuga

发明人： Koichi Shigematsu ,  Satoshi Kobayashi ,  Kiyoshi Ohsuga

IPC分类号： G02F1/13

CPC分类号： G02F1/133351 ,  B23K26/40 ,  B23K26/53 ,  B23K26/57 ,  B23K2103/172 ,  B23K2103/50 ,  G02F2001/133368

摘要： A method of laser processing a liquid crystal device wafer which is formed by laminating together a silicon substrate and a glass substrate, and has liquid crystal devices in respective rectangular areas sectioned by streets arranged in a lattice pattern on the front surface, the method comprising: a first deteriorated layer forming step for forming a deteriorated layer along the streets in the inside of the silicon substrate by applying a laser beam of a wavelength capable of passing through the silicone substrate and forming a deteriorated layer in the inside of the silicon substrate from the glass substrate side with its focal point set to the inside of the silicon substrate; and a second deteriorated layer forming step for forming a deteriorated layer along the streets in the inside of the glass substrate by applying a laser beam of a wavelength capable of passing through the glass substrate and forming a deteriorated layer in the inside of the glass substrate with its focal point set to the inside of the glass substrate.

摘要翻译： 1.一种激光处理液晶装置晶片的方法，所述液晶装置晶片是通过将硅基板和玻璃基板层压在一起形成的，并且在前表面上以格子状布置的街道划分的各个矩形区域中具有液晶装置，所述方法包括： 第一劣化层形成步骤，通过施加能够穿过硅氧烷基底的波长的激光束在硅衬底的内部沿着街道形成劣化层，并从硅衬底的内部形成劣化层 玻璃基板侧，其焦点设置在硅基板的内部; 以及第二劣化层形成步骤，用于通过施加能够穿过玻璃基板的波长的激光束在玻璃基板的内部沿着街道形成劣化层，并在玻璃基板的内部形成劣化层， 其焦点设置在玻璃基板的内部。