发明授权
- 专利标题： Charged particle beam apparatus and sample manufacturing method
- 专利标题（中）： 带电粒子束装置和样品制造方法
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申请号： US11258035申请日： 2005-10-26
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公开(公告)号： US07928377B2公开(公告)日： 2011-04-19
- 发明人: Tohru Ishitani , Tsuyoshi Ohnishi , Mitsugu Sato , Koichiro Takeuchi
- 申请人： Tohru Ishitani , Tsuyoshi Ohnishi , Mitsugu Sato , Koichiro Takeuchi
- 申请人地址： JP Tokyo
- 专利权人： Hitachi High-Technologies Corporation
- 当前专利权人： Hitachi High-Technologies Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2004-312703 20041027
- 主分类号： G01N23/04
- IPC分类号： G01N23/04
摘要：
It is possible to carry out a highly accurate thin film machining by irradiation of an ion beam to a sample and a high-resolution STEM observation of the sample by irradiating an electron beam with a high throughput almost without moving the sample. The FIB irradiation system has an irradiation axis almost orthogonally intersecting an irradiation axis of the STEM observation electron beam irradiation system. The sample is arranged at the intersection point of the irradiation axes. The FIB machining plane of the sample is extracted from the thin film plane of the STEM observation sample. The transmitting/scattered beam detector are arranged at backward of the sample on the electron beam irradiation axis viewed from the electron beam irradiation direction.
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