发明授权
- 专利标题： Method and structure for forming strained SI for CMOS devices
- 专利标题（中）： 用于形成CMOS器件的应变SI的方法和结构
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申请号： US12685054申请日： 2010-01-11
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公开(公告)号： US07928443B2公开(公告)日： 2011-04-19
- 发明人: An L. Steegen , Haining S. Yang , Ying Zhang
- 申请人： An L. Steegen , Haining S. Yang , Ying Zhang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Joseph P. Abate
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor device includes a semiconductor substrate having at least one gap, extending under a portion of the semiconductor substrate. A gate stack is on the semiconductor substrate. A strain layer is formed in at least a portion of the at least one gap. The strain layer is formed only under at least one of a source region and a drain region of the semiconductor device.
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