发明授权
US07929342B2 Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory
有权
磁存储单元，磁随机存取存储器以及用于磁随机存取存储器的数据读/写方法
- 专利标题： Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory
- 专利标题（中）： 磁存储单元，磁随机存取存储器以及用于磁随机存取存储器的数据读/写方法
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申请号： US11996711申请日： 2006-08-04
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公开(公告)号： US07929342B2公开(公告)日： 2011-04-19
- 发明人: Hideaki Numata , Norikazu Ohshima , Tetsuhiro Suzuki , Tadahiko Sugibayashi , Nobuyuki Ishiwata , Shunsuke Fukami
- 申请人： Hideaki Numata , Norikazu Ohshima , Tetsuhiro Suzuki , Tadahiko Sugibayashi , Nobuyuki Ishiwata , Shunsuke Fukami
- 申请人地址： JP Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2005-235187 20050815; JP2006-088068 20060328
- 国际申请： PCT/JP2006/315528 WO 20060804
- 国际公布： WO2007/020823 WO 20070222
- 主分类号： G11C11/14
- IPC分类号： G11C11/14
摘要：
The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer.A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and faces the pinned layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13.
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