Invention Grant
- Patent Title: Method of operating nonvolatile memory device
- Patent Title (中): 操作非易失性存储器件的方法
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Application No.: US12071961Application Date: 2008-02-28
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Publication No.: US07929349B2Publication Date: 2011-04-19
- Inventor: Kwang-soo Seol , Sang-jin Park , Sung-hoon Lee , Sung-il Park , Jong-seob Kim
- Applicant: Kwang-soo Seol , Sang-jin Park , Sung-hoon Lee , Sung-il Park , Jong-seob Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, PLC
- Priority: KR10-2007-0020622 20070228; KR10-2007-0037166 20070416
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
Provided is a method of operating a nonvolatile memory device to perform a programming operation or an erase operation. The method includes applying a composite pulse including a direct current (DC) pulse and an AC perturbation pulse to the nonvolatile memory device to perform the programming operation or the erase operation.
Public/Granted literature
- US20080205157A1 Method of operating nonvolatile memory device Public/Granted day:2008-08-28
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