发明授权
- 专利标题： Method for reducing lateral movement of charges and memory device thereof
- 专利标题（中）： 减少电荷横向运动的方法及其记忆装置
-
申请号： US12382790申请日： 2009-03-24
-
公开(公告)号： US07929351B2公开(公告)日： 2011-04-19
- 发明人: Kwang-soo Seol , Young-gu Jin , Yoon-dong Park
- 申请人： Kwang-soo Seol , Young-gu Jin , Yoon-dong Park
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2008-0027592 20080325
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
Provided is a method and device for reducing lateral movement of charges. The method may include pre-programming at least one memory cell that is in an erased state by applying a pre-programming voltage to the at least one memory cell to have a narrower distribution of threshold voltages than the at least one erased state memory cell and verifying that the pre-programmed memory cell is in the pre-programmed state using a negative effective verifying voltage.
公开/授权文献
信息查询
