Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
- Patent Title (中): 半导体器件及其制造方法相同
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Application No.: US12749440Application Date: 2010-03-29
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Publication No.: US07932121B2Publication Date: 2011-04-26
- Inventor: Naoyuki Watanabe
- Applicant: Naoyuki Watanabe
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Priority: JP2005-330499 20051115
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A semiconductor device includes a semiconductor element, a transparent member separated from the semiconductor element by a designated length and facing the semiconductor element, a sealing member sealing an edge surface of the transparent member and an edge part of the semiconductor element, and a shock-absorbing member provided between the edge surface of the transparent member and the sealing member and easing a stress which the transparent member receives from the sealing member or the semiconductor element.
Public/Granted literature
- US20100248453A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2010-09-30
Information query
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