发明授权
US07932164B2 Method for manufacturing semiconductor substrate by using monitor substrate to obtain optimal energy density for laser irradiation of single crystal semiconductor layers
有权
通过使用监视器基板来获得用于单晶半导体层的激光照射的最佳能量密度的半导体衬底的制造方法
- 专利标题: Method for manufacturing semiconductor substrate by using monitor substrate to obtain optimal energy density for laser irradiation of single crystal semiconductor layers
- 专利标题(中): 通过使用监视器基板来获得用于单晶半导体层的激光照射的最佳能量密度的半导体衬底的制造方法
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申请号: US12402518申请日: 2009-03-12
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公开(公告)号: US07932164B2公开(公告)日: 2011-04-26
- 发明人: Akihisa Shimomura , Masaki Koyama , Motoki Nakashima
- 申请人: Akihisa Shimomura , Masaki Koyama , Motoki Nakashima
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP2008-067302 20080317
- 主分类号: H01L21/30
- IPC分类号: H01L21/30 ; H01L21/301 ; H01L21/46
摘要:
Methods for manufacturing a semiconductor substrate and a semiconductor device by which a high-performance semiconductor element can be formed are provided. A single crystal semiconductor substrate including an embrittlement layer and a base substrate are bonded to each other with an insulating layer interposed therebetween, and the single crystal semiconductor substrate is separated along the embrittlement layer by heat treatment to fix a single crystal semiconductor layer over the base substrate. Next, a plurality of regions of a monitor substrate are irradiated with laser light under conditions of different energy densities, and carbon concentration distribution and hydrogen concentration distribution in a depth direction of each region of the single crystal semiconductor layer which has been irradiated with the laser light is measured. Optimal irradiation intensity of laser light is irradiation intensity with which a local maximum of the carbon concentration and a shoulder peak of the hydrogen concentration are observed. A single crystal semiconductor layer is irradiated with optimal laser light at energy density detected by using the monitor substrate, whereby a semiconductor substrate is manufactured.