发明授权
US07932513B2 Magnetic random access memory, and write method and manufacturing method of the same
有权
磁性随机存取存储器及其写入方法和制造方法相同
- 专利标题: Magnetic random access memory, and write method and manufacturing method of the same
- 专利标题(中): 磁性随机存取存储器及其写入方法和制造方法相同
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申请号: US12043617申请日: 2008-03-06
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公开(公告)号: US07932513B2公开(公告)日: 2011-04-26
- 发明人: Keiji Hosotani , Yoshiaki Asao , Toshihiko Nagase
- 申请人: Keiji Hosotani , Yoshiaki Asao , Toshihiko Nagase
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2007-060693 20070309
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L29/08 ; H01L39/00
摘要:
A magnetic random access memory includes a bit line running in a first direction, a first word line running in a second direction different from the first direction, and a memory element having a magnetoresistive effect element including a fixed layer having a fixed magnetization direction, a recording layer having a reversible magnetization direction, and a nonmagnetic layer formed between the fixed layer and the recording layer, the magnetization directions in the fixed layer and the recording layer being perpendicular to a film surface, and a heater layer in contact with the magnetoresistive effect element, the memory element being connected to the bit line, and formed to oppose a side surface of the first word line such that the memory element is insulated from the first word line.