发明授权
- 专利标题： Light-emitting diode device and method for fabricating the same
- 专利标题（中）： 发光二极管装置及其制造方法
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申请号： US12200171申请日： 2008-08-28
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公开(公告)号： US07932529B2公开(公告)日： 2011-04-26
- 发明人: Tzu-Han Lin , Jui-Ping Weng , Tzy-Ying Lin , Kuo-Jung Fu
- 申请人： Tzu-Han Lin , Jui-Ping Weng , Tzy-Ying Lin , Kuo-Jung Fu
- 申请人地址： TW Hsinchu
- 专利权人： VisEra Technologies Company Limited
- 当前专利权人： VisEra Technologies Company Limited
- 当前专利权人地址： TW Hsinchu
- 代理机构： Muncy, Geissler, Olds & Lowe, PLLC
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L21/00
摘要：
A semiconductor device is disclosed. The semiconductor device comprises a light-emitting diode chip disposed in a cavity of a semiconductor substrate. At least two isolated outer wiring layers are disposed on the bottom surface of the semiconductor substrate and are electrically connected to the light-emitting diode chip, serving as input terminals. A lens module is adhered to the top surface of the semiconductor substrate to cap the cavity, in which the lens module comprises a molded lens and a transparent conductive layer coated with a fluorescent material under the molded lens. A method for fabricating the semiconductor devices is also disclosed.
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