Invention Grant
US07935543B2 Method of forming PZT ferroelectric capacitors for integrated circuits
有权
形成用于集成电路的PZT铁电电容器的方法
- Patent Title: Method of forming PZT ferroelectric capacitors for integrated circuits
- Patent Title (中): 形成用于集成电路的PZT铁电电容器的方法
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Application No.: US12472265Application Date: 2009-05-26
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Publication No.: US07935543B2Publication Date: 2011-05-03
- Inventor: Theodore S. Moise, IV , Scott R. Summerfelt , Kezhakkedath R. Udayakumar
- Applicant: Theodore S. Moise, IV , Scott R. Summerfelt , Kezhakkedath R. Udayakumar
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
One aspect of the invention relates to a method of manufacturing an integrated circuit comprising forming an array of ferroelectric memory cells on a semiconductor substrate, heating the substrate to a temperature near a Curie temperature of the ferroelectric cores, and subjecting the substrate to a temperature program, whereby thermally induced stresses on the ferroelectric cores cause a switched polarization of the cores to increase by at least about 25% as the cores cool to about room temperature. Embodiments of the invention include metal filled vias of expanded cross-section above and below the ferroelectric cores, which increase the thermal stresses on the ferroelectric cores during cooling.
Public/Granted literature
- US20090233382A1 High Polarization Ferroelectric Capacitors for Integrated Circuits Public/Granted day:2009-09-17
Information query
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