Invention Grant
- Patent Title: Semiconductor light emitting device and method of manufacturing the same
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US12407361Application Date: 2009-03-19
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Publication No.: US07935554B2Publication Date: 2011-05-03
- Inventor: Jeong-wook Lee , Youn-joon Sung , Ho-sun Paek , Hyun-soo Kim , Joo-sung Kim , Suk-ho Yoon
- Applicant: Jeong-wook Lee , Youn-joon Sung , Ho-sun Paek , Hyun-soo Kim , Joo-sung Kim , Suk-ho Yoon
- Applicant Address: KR Suwon, Gyunggi-do
- Assignee: Samsung LED Co., Ltd.
- Current Assignee: Samsung LED Co., Ltd.
- Current Assignee Address: KR Suwon, Gyunggi-do
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: KR10-2004-0103112 20041208; KR10-2006-0014241 20060214
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.
Public/Granted literature
- US20090181484A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-07-16
Information query
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