发明授权
- 专利标题： Semiconductor light emitting device and method of manufacturing the same
- 专利标题（中）： 半导体发光器件及其制造方法
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申请号： US12407361申请日： 2009-03-19
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公开(公告)号： US07935554B2公开(公告)日： 2011-05-03
- 发明人: Jeong-wook Lee , Youn-joon Sung , Ho-sun Paek , Hyun-soo Kim , Joo-sung Kim , Suk-ho Yoon
- 申请人： Jeong-wook Lee , Youn-joon Sung , Ho-sun Paek , Hyun-soo Kim , Joo-sung Kim , Suk-ho Yoon
- 申请人地址： KR Suwon, Gyunggi-do
- 专利权人： Samsung LED Co., Ltd.
- 当前专利权人： Samsung LED Co., Ltd.
- 当前专利权人地址： KR Suwon, Gyunggi-do
- 代理机构： Buchanan Ingersoll & Rooney PC
- 优先权： KR10-2004-0103112 20041208; KR10-2006-0014241 20060214
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.