发明授权
- 专利标题: Wafer-level fabrication of lidded chips with electrodeposited dielectric coating
- 专利标题(中): 用电沉积电介质涂层的晶圆级制造带芯芯片
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申请号: US11590616申请日: 2006-10-31
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公开(公告)号: US07935568B2公开(公告)日: 2011-05-03
- 发明人: Vage Oganesian , David Ovrutsky , Charles Rosenstein , Belgacem Haba , Giles Humpston
- 申请人: Vage Oganesian , David Ovrutsky , Charles Rosenstein , Belgacem Haba , Giles Humpston
- 申请人地址: IE
- 专利权人: Tessera Technologies Ireland Limited
- 当前专利权人: Tessera Technologies Ireland Limited
- 当前专利权人地址: IE
- 代理机构: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- 主分类号: H01L21/44
- IPC分类号: H01L21/44 ; H01L21/48 ; H01L21/50
摘要:
A method is provided for fabricating a unit including a semiconductor element such as a sensor unit, e.g., for optical imaging. A semiconductor element has plurality of conductive features exposed at the front surface and semiconductive or conductive material exposed at least one of the front and rear surfaces. At least some of the conductive features are insulated from the exposed semiconductive or conductive material. By electrodeposition, an insulative layer is formed to overlie the at least one of exposed semiconductive material or conductive material. Subsequently, a plurality of conductive contacts and a plurality of conductive traces are formed overlying the electrodeposited insulative layer, the conductive traces connecting the conductive features to the conductive contacts. The unit can be incorporated in a camera module having an optical element in registration with an imaging area of the semiconductor element.