Invention Grant
- Patent Title: Nanowire transistor and method for forming same
- Patent Title (中): 纳米线晶体管及其形成方法
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Application No.: US11732675Application Date: 2007-04-04
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Publication No.: US07935599B2Publication Date: 2011-05-03
- Inventor: Mark A. Crowder , Yutaka Takafuji
- Applicant: Mark A. Crowder , Yutaka Takafuji
- Applicant Address: US WA Camas
- Assignee: Sharp Laboratories of America, Inc.
- Current Assignee: Sharp Laboratories of America, Inc.
- Current Assignee Address: US WA Camas
- Agency: Law Office of Gerald Maliszewski
- Agent Gerald Maliszewski
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L21/336
Abstract:
A method is provided for removing reentrant stringers in the fabrication of a nanowire transistor (NWT). The method provides a cylindrical nanostructure with an outside surface axis overlying a substrate surface. The nanostructure includes an insulated semiconductor core. A conductive film is conformally deposited overlying the nanostructure, to function as a gate strap or a combination gate and gate strap. A hard mask insulator is deposited overlying the conductive film and selected regions of the hard mask are anisotropically plasma etched. As a result, a conductive film gate electrode is formed substantially surrounding a cylindrical section of nanostructure. Inadvertently, conductive film reentrant stringers may be formed adjacent the nanostructure outside surface axis, made from the conductive film. The method etches, and so removes the conductive film reentrant stringers.
Public/Granted literature
- US20080248642A1 Nanowire transistor and method for forming same Public/Granted day:2008-10-09
Information query
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