发明授权
- 专利标题： Silicon carbide semiconductor device and method for producing the same
- 专利标题（中）： 碳化硅半导体器件及其制造方法
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申请号： US12310024申请日： 2007-08-01
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公开(公告)号： US07935628B2公开(公告)日： 2011-05-03
- 发明人: Shinsuke Harada , Makoto Katou , Kenji Fukuda , Tsutomu Yatsuo
- 申请人： Shinsuke Harada , Makoto Katou , Kenji Fukuda , Tsutomu Yatsuo
- 申请人地址： JP Tokyo
- 专利权人： National Institute for Advanced Industrial Science and Technology
- 当前专利权人： National Institute for Advanced Industrial Science and Technology
- 当前专利权人地址： JP Tokyo
- 代理机构： Wenderoth, Lind & Ponack, L.L.P.
- 优先权： JP2006-216428 20060809
- 国际申请： PCT/JP2007/065077 WO 20070801
- 国际公布： WO2008/018342 WO 20080214
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
A low on-resistance silicon carbide semiconductor device is provided to include an ohmic electrode of low contact resistance and high adhesion strength formed on a lower surface of silicon carbide. Specifically, the silicon carbide semiconductor device includes at least an insulating film, formed on an upper surface of a silicon carbide substrate, and includes at least an ohmic electrode, formed of an alloy comprising nickel and titanium, or formed of a silicide comprising nickel and titanium, and which is formed on the lower surface of the silicon carbide substrate.
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