发明授权
- 专利标题: Stress management for tensile films
- 专利标题(中): 拉伸薄膜的应力管理
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申请号: US12604332申请日: 2009-10-22
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公开(公告)号: US07935643B2公开(公告)日: 2011-05-03
- 发明人: Jingmei Liang , Anjana M. Patel , Nitin K. Ingle , Shankar Venkataraman
- 申请人: Jingmei Liang , Anjana M. Patel , Nitin K. Ingle , Shankar Venkataraman
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Kilpatrick, Townsend and Stockton
- 主分类号: H01L21/31
- IPC分类号: H01L21/31 ; H01L21/469
摘要:
The formation of a gap-filling silicon oxide layer with reduced tendency towards cracking is described. The deposition involves the formation of a flowable silicon-containing layer which facilitates the filling of trenches. Subsequent processing at high substrate temperature causes less cracking in the dielectric film than flowable films formed in accordance with methods in the prior art. A compressive liner layer deposited prior to the formation of the gap-filling silicon oxide layer is described and reduces the tendency for the subsequently deposited film to crack. A compressive capping layer deposited after a flowable silicon-containing layer has also been determined to reduce cracking. Compressive liner layers and compressive capping layers can be used alone or in combination to reduce and often eliminate cracking. Compressive capping layers in disclosed embodiments have additionally been determined to enable an underlying layer of silicon nitride to be transformed into a silicon oxide layer.
公开/授权文献
- US20110034035A1 STRESS MANAGEMENT FOR TENSILE FILMS 公开/授权日:2011-02-10