Invention Grant
- Patent Title: Artificial band gap
- Patent Title (中): 人造带隙
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Application No.: US11598918Application Date: 2006-11-13
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Publication No.: US07935954B2Publication Date: 2011-05-03
- Inventor: Avto Tavkhelidze , Jonathan Sidney Edelson , Isaiah Watas Cox , Stuart Harbron
- Applicant: Avto Tavkhelidze , Jonathan Sidney Edelson , Isaiah Watas Cox , Stuart Harbron
- Applicant Address: GI
- Assignee: Borealis Technical Limited
- Current Assignee: Borealis Technical Limited
- Current Assignee Address: GI
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
A method is disclosed for the induction of a suitable band gap and electron emissive properties into a substance, in which the substrate is provided with a surface structure corresponding to the interference of electron waves. Lithographic or similar techniques are used, either directly onto a metal mounted on the substrate, or onto a mold which then is used to impress the metal. In a preferred embodiment, a trench or series of nano-sized trenches are formed in the metal.
Public/Granted literature
- US20070057245A1 Artificial band gap Public/Granted day:2007-03-15
Information query
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