Invention Grant
US07935985B2 N-face high electron mobility transistors with low buffer leakage and low parasitic resistance
有权
具有低缓冲器泄漏和低寄生电阻的N面高电子迁移率晶体管
- Patent Title: N-face high electron mobility transistors with low buffer leakage and low parasitic resistance
- Patent Title (中): 具有低缓冲器泄漏和低寄生电阻的N面高电子迁移率晶体管
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Application No.: US12059902Application Date: 2008-03-31
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Publication No.: US07935985B2Publication Date: 2011-05-03
- Inventor: Umesh K. Mishra , Yi Pei , Siddharth Rajan , Man Hoi Wong
- Applicant: Umesh K. Mishra , Yi Pei , Siddharth Rajan , Man Hoi Wong
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of Califonia
- Current Assignee: The Regents of the University of Califonia
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A method for fabricating nitrogen-face (N-face) nitride-based electronic devices with low buffer leakage, comprising isolating a buffer from a substrate with an AlGaInN nucleation layer to suppress impurity incorporation from the substrate into the buffer. A method for fabricating N-face nitride-based electronic devices with low parasitic resistance and high breakdown, comprising capping a device structure with a conductive layer to provide extremely low access and/or contact resistances, is also disclosed.
Public/Granted literature
- US20080237640A1 N-FACE HIGH ELECTRON MOBILITY TRANSISTORS WITH LOW BUFFER LEAKAGE AND LOW PARASITIC RESISTANCE Public/Granted day:2008-10-02
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