发明授权
US07936539B2 Bottom spin valve GMR sensor incorporating plural oxygen surfactant layers
有权
底部自旋阀GMR传感器结合了多个氧表面活性剂层
- 专利标题: Bottom spin valve GMR sensor incorporating plural oxygen surfactant layers
- 专利标题(中): 底部自旋阀GMR传感器结合了多个氧表面活性剂层
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申请号: US11717973申请日: 2007-03-14
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公开(公告)号: US07936539B2公开(公告)日: 2011-05-03
- 发明人: Cheng T. Horng , Ru-Ying Tong
- 申请人: Cheng T. Horng , Ru-Ying Tong
- 申请人地址: US CA Milpitas
- 专利权人: Headway Technologies, Inc.
- 当前专利权人: Headway Technologies, Inc.
- 当前专利权人地址: US CA Milpitas
- 代理机构: Saile Ackerman LLC
- 代理商 Stephen B. Ackerman
- 主分类号: G11B5/39
- IPC分类号: G11B5/39
摘要:
A bottom spin-valve GMR sensor has been fabricated that has ultra-thin layers of high density and smoothness. In addition, these layers are inherently furnished with sub-monolayer thick oxygen surfactant layers. The sensor is fabricated using a method in which the layers are sputtered in a mixture of Ar and O2. A particularly novel feature of the method is the use of a sputtering chamber with an ultra-low base pressure and correspondingly ultra-low pressure mixtures of Ar and O2 sputtering gas (
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