发明授权
- 专利标题： Semiconductor memory apparatus having noise generating block and method of testing the same
- 专利标题（中）： 具有噪声发生块的半导体存储装置及其测试方法
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申请号： US11641854申请日： 2006-12-20
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公开(公告)号： US07937629B2公开(公告)日： 2011-05-03
- 发明人: Jun-Hyun Chun
- 申请人： Jun-Hyun Chun
- 申请人地址： KR Ichon-shi
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Ichon-shi
- 代理机构： Venable LLP
- 代理商 Jeffri A. Kaminski
- 优先权： KR10-2006-0031617 20060406
- 主分类号： G11C29/00
- IPC分类号： G11C29/00 ; G11C7/00 ; G01R35/00 ; G01R31/26
摘要：
Disclosed are a semiconductor memory apparatus and a method of testing the same. The semiconductor memory apparatus includes memory banks, each of which includes a plurality of memory cells, a peripheral circuit unit that includes a plurality of circuit groups around the memory banks, and a noise generating block that is disposed in the peripheral circuit unit and selectively applies a noise to the memory banks in a test mode.
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