Invention Grant
- Patent Title: Forming a carbon passivated ovonic threshold switch
- Patent Title (中): 形成碳钝化超声门限开关
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Application No.: US12346705Application Date: 2008-12-30
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Publication No.: US07939815B2Publication Date: 2011-05-10
- Inventor: Jinwook Lee , Kuo-wei Chang , Jason S. Reid , Wim Y. Deweerd , Aleshandre M. Diaz
- Applicant: Jinwook Lee , Kuo-wei Chang , Jason S. Reid , Wim Y. Deweerd , Aleshandre M. Diaz
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed IP Law Group PLLC
- Agent Lisa K. Jorgenson; Robert Iannucci
- Main IPC: H01L29/02
- IPC: H01L29/02

Abstract:
By making an ovonic threshold switch using a carbon interfacial layer having a thickness of less than or equal to ten percent of the thickness of the associated electrode, cycle endurance may be improved. In some embodiments, a glue layer may be used between the carbon and the chalcogenide of the ovonic threshold switch. The glue layer may be effective to improve adherence between carbon and chalcogenide.
Public/Granted literature
- US20100163818A1 FORMING A CARBON PASSIVATED OVONIC THRESHOLD SWITCH Public/Granted day:2010-07-01
Information query
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