公开(公告)号：US07060634B2

公开(公告)日：2006-06-13

申请号：US10346451

申请日：2003-01-17

申请人： Juha T. Rantala ,  Jason S. Reid ,  Nungavram S. Viswanathan ,  T. Teemu T. Tormanen

发明人： Juha T. Rantala ,  Jason S. Reid ,  Nungavram S. Viswanathan ,  T. Teemu T. Tormanen

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/316 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： An integrated circuit is provided comprising a substrate and discrete areas of electrically insulating and electrically conductive material, wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more and a dielectric constant of 3.0 or less. The integrated circuit can be made by a method comprising: providing a substrate; forming discrete areas of electrically insulating and electrically conductive material on the substrate; wherein the electrically insulating material is deposited on the substrate followed by heating at a temperature of 350° C. or less; and wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more after densification. Also disclosed is a method for making an integrated circuit comprising performing a dual damascene method with an electrically conductive material and a dielectric, the dielectric being a directly photopatterned hybrid organic-inorganic material.

摘要翻译： 提供一种集成电路，其包括基板和电绝缘和导电材料的离散区域，其中电绝缘材料是具有1.45g / cm 3以上的密度的杂化有机 - 无机材料 介电常数为3.0以下。 集成电路可以通过以下方法制成：包括：提供衬底; 在衬底上形成电绝缘和导电材料的离散区域; 其中所述电绝缘材料沉积在所述基板上，然后在350℃或更低的温度下加热; 并且其中所述电绝缘材料是在致密化之后具有1.45g / cm 3以上的密度的混合有机 - 无机材料。 还公开了一种用于制造集成电路的方法，包括用导电材料和电介质进行双镶嵌方法，所述电介质是直接光刻图案化的杂化有机 - 无机材料。

公开(公告)号：US07939815B2

公开(公告)日：2011-05-10

申请号：US12346705

申请日：2008-12-30

申请人： Jinwook Lee ,  Kuo-wei Chang ,  Jason S. Reid ,  Wim Y. Deweerd ,  Aleshandre M. Diaz

发明人： Jinwook Lee ,  Kuo-wei Chang ,  Jason S. Reid ,  Wim Y. Deweerd ,  Aleshandre M. Diaz

IPC分类号： H01L29/02

CPC分类号： H01L27/2427 ,  H01L45/04 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/141 ,  H01L45/1641 ,  H01L45/1683 ,  Y10S438/90

摘要： By making an ovonic threshold switch using a carbon interfacial layer having a thickness of less than or equal to ten percent of the thickness of the associated electrode, cycle endurance may be improved. In some embodiments, a glue layer may be used between the carbon and the chalcogenide of the ovonic threshold switch. The glue layer may be effective to improve adherence between carbon and chalcogenide.

摘要翻译： 通过使用具有小于或等于相关电极的厚度的百分之十的厚度的碳界面层进行超声波阈值开关，可以提高循环耐久性。 在一些实施方案中，可以在碳和阈值开关的硫族化物之间使用胶层。 胶层可以有效地改善碳和硫族化物之间的粘附性。

公开(公告)号：US07473650B2

公开(公告)日：2009-01-06

申请号：US11606941

申请日：2006-12-01

申请人： Juha T. Rantala ,  Jason S. Reid ,  T. Teemu T. Tormanen ,  Nungavram S. Viswanathan ,  Arto L. T. Maaninen

发明人： Juha T. Rantala ,  Jason S. Reid ,  T. Teemu T. Tormanen ,  Nungavram S. Viswanathan ,  Arto L. T. Maaninen

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L2221/1031

摘要： A method for making an integrated circuit is disclosed as comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by: a silane precursor having a fully or partially fluorinated first organic group comprising an unsaturated carbon-carbon double bond, the fully or partially fluorinated organic group bound to silicon in the silane precursor; forming from the silane precursor a hybrid organic-inorganic material having a molecular weight of at least 500 on a substrate; and increasing the molecular weight of the hybrid material by exposure to heat, electromagnetic radiation or electron beam so as to break the unsaturated carbon-carbon double bond and cross link via the fully or partially fluorinated organic group. Also disclosed is a method for making an integrated circuit is disclosed as comprising: reacting a compound of the general formula X3MOR33, where X3 is a halogen, M is silicon, and OR3 is alkoxy; with a compound of the general formula R1M1; where R1 is selected from alkyl, alkenyl, aryl and alkynyl and wherein R1 is partially or fully fluorinated; and M1 is an element from group I of the periodic table; so as to form a compound of the general formula R1MOR33; hydrolyzing and condensing R1MOR33 so as to form a hybrid organic-inorganic material with a molecular weight of at least 500; depositing the hybrid organic-inorganic material on a substrate as an insulator in an integrated circuit; depositing, before or after depositing the hybrid material, an electrically conductive material within the integrated circuit.

摘要翻译： 公开了一种用于制造集成电路的方法，包括在衬底上沉积导电和介电材料的交替区域，其中介电材料的区域通过以下形成：具有完全或部分氟化的第一有机基团的硅烷前体，其包含不饱和碳 碳双键，全部或部分氟化的有机基团与硅烷前体中的硅键合; 从硅烷前体形成在基材上分子量至少为500的杂化有机 - 无机材料; 并且通过暴露于热，电磁辐射或电子束来增加杂化材料的分子量，以便通过完全或部分氟化的有机基团破坏不饱和碳 - 碳双键和交联。 还公开了一种用于制造集成电路的方法，其包括：使通式X3MOR33的化合物，其中X3是卤素，M是硅，OR3是烷氧基; 与通式R 1 M 1的化合物反应; 其中R 1选自烷基，烯基，芳基和炔基，并且其中R 1部分或完全氟化; M1是周期表第I组元素; 以形成通式R 1 MOR 33的化合物; 水解和冷凝R1MOR33，以形成分子量至少为500的杂化有机 - 无机材料; 将杂化有机 - 无机材料沉积在集成电路中作为绝缘体的衬底上; 在沉积杂化材料之前或之后沉积集成电路内的导电材料。

公开(公告)号：US06960305B2

公开(公告)日：2005-11-01

申请号：US10402777

申请日：2003-03-28

申请人： Jonathan C. Doan ,  Satyadev R. Patel ,  Andrew G. Huibers ,  Jason S. Reid

发明人： Jonathan C. Doan ,  Satyadev R. Patel ,  Andrew G. Huibers ,  Jason S. Reid

IPC分类号： B81C1/00 ,  C23F1/00

CPC分类号： C23F4/00 ,  B81B2201/045 ,  B81C1/00476 ,  C03C17/36 ,  C03C17/3663 ,  G02B26/0841 ,  H01L21/32135

摘要： A method for making a spatial light modulator is disclosed, that comprises forming an array of micromirrors each having a hinge and a micromirror plate held via the hinge on a substrate, the micromirror plate being disposed in a plane separate from the hinge and having a hinge made of a transition metal nitride, followed by releasing the micromirrors in a spontaneous gas phase chemical etchant. Also disclosed is a projection system that comprises such a spatial light modulator, as well as a light source, condensing optics, wherein light from the light source is focused onto the array of micromirrors, projection optics for projecting light selectively reflected from the array of micromirrors onto a target, and a controller for selectively actuating the micromirrors in the array.

摘要翻译： 公开了一种用于制造空间光调制器的方法，其包括形成各自具有铰链的微镜阵列和通过所述铰链保持在基板上的微镜板，所述微镜板设置在与所述铰链分离的平面中并且具有铰链 由过渡金属氮化物制成，然后在自发气相化学蚀刻剂中释放微反射镜。 还公开了一种投影系统，其包括这样的空间光调制器以及光源，聚光光学器件，其中来自光源的光聚焦到微镜阵列上，用于投射从微镜阵列反射的光的投影光学器件 以及用于选择性地致动阵列中的微镜的控制器。

公开(公告)号：US06958123B2

公开(公告)日：2005-10-25

申请号：US10167272

申请日：2002-06-10

申请人： Jason S. Reid ,  Nungavaram S. Viswanathan

发明人： Jason S. Reid ,  Nungavaram S. Viswanathan

IPC分类号： B81B3/00 ,  C23F1/00 ,  H01L21/00

CPC分类号： B81C1/00476 ,  B81B2201/045 ,  B81C2201/0108 ,  B81C2201/112 ,  B81C2201/117 ,  B82Y30/00

摘要： A method comprises depositing an organic material on a substrate; depositing additional material different from the organic material after depositing the organic material; and removing the organic material with a compressed fluid. Also disclosed is a method comprising: providing an organic layer on a substrate; after providing the organic layer, providing one or more layers of a material different than the organic material of the organic layer; removing the organic layer with a compressed fluid; and providing an anti-stiction agent with a compressed fluid to material remaining after removal of the organic layer.

摘要翻译： 一种方法包括在衬底上沉积有机材料; 在沉积有机材料之后沉积与有机材料不同的附加材料; 并用压缩流体除去有机材料。 还公开了一种方法，包括：在衬底上提供有机层; 在提供有机层之后，提供与有机层的有机材料不同的一层或多层材料; 用压缩流体去除有机层; 并且在去除有机层之后向剩余的材料提供具有压缩流体的抗静电剂。

公开(公告)号：US06974970B2

公开(公告)日：2005-12-13

申请号：US10346449

申请日：2003-01-17

申请人： Juha T. Rantala ,  Jason S. Reid ,  Nungavram S. Viswanathan ,  T. Teemu T. Tormanen

发明人： Juha T. Rantala ,  Jason S. Reid ,  Nungavram S. Viswanathan ,  T. Teemu T. Tormanen

IPC分类号： C08G77/24 ,  C08G77/58 ,  C09K13/00 ,  H01L20060101 ,  H01L21/312 ,  H01L21/768 ,  H01L21/8238 ,  H01L23/48 ,  H01L23/522 ,  H01L23/532 ,  H01L35/24

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/316 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： Thin films are disclosed that are suitable as dielectrics in IC's and for other similar applications. In particular, the invention concerns thin films comprising compositions obtainable by hydrolysis of two or more silicon compounds, which yield an at least partially cross-linked siloxane structure. The invention also concerns a method for producing such films by preparing siloxane compositions by hydrolysis of suitable reactants, by applying the hydrolyzed compositions on a substrate in the form of a thin layer and by curing the layer to form a film. In one example, a thin film comprising a composition is obtained by hydrolyzing a monomeric silicon compound having at least one hydrocarbyl radical, containing an unsaturated carbon-to-carbon bond, and at least one hydrolyzable group attached to the silicon atom of the compound with another monomeric silicon compound having at least one aryl group and at least one hydrolyzable group attached to the silicon atom of the compound to form a siloxane material.

摘要翻译： 公开了适合作为IC中的电介质和其它类似应用的薄膜。 特别地，本发明涉及包含通过水解两种或更多种硅化合物获得的组合物的薄膜，其产生至少部分交联的硅氧烷结构。 本发明还涉及通过将水解的组合物以薄层的形式施加在基材上并通过固化该层以形成膜而通过水解合适的反应物制备硅氧烷组合物来生产这种膜的方法。 在一个实例中，包含组合物的薄膜通过水解具有至少一个含有不饱和碳 - 碳键的烃基的单体硅化合物和至少一个与化合物的硅原子连接的可水解基团来获得， 具有至少一个芳基的至少一个单体硅化合物和至少一个与化合物的硅原子连接以形成硅氧烷材料的可水解基团。

公开(公告)号：US20100215839A1

公开(公告)日：2010-08-26

申请号：US12588364

申请日：2009-10-13

申请人： Juha T. Rantala ,  Jason S. Reid ,  T. Teemu Tormanen ,  Nungavram Viswanathan

发明人： Juha T. Rantala ,  Jason S. Reid ,  T. Teemu Tormanen ,  Nungavram Viswanathan

IPC分类号： H05K3/00

CPC分类号： H01L21/3121 ,  C07F7/0874 ,  C07F7/12 ,  C07F7/123 ,  C07F7/1804 ,  C07F7/1888 ,  C09D183/04 ,  C09D183/14 ,  H01L21/02131 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/0271 ,  H01L21/31133 ,  H01L21/3122 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76825

摘要： A method for making an integrated circuit is disclosed comprising depositing alternating regions of electrically conductive material and hybrid organic inorganic dielectric material on a substrate, wherein an area of dielectric material is formed by hydrolyzing a plurality of precursors to form a hybrid organic inorganic material comprised of a silicon oxide backbone and having an organic substituent bound to the backbone, and depositing the hybrid organic inorganic material on a substrate, removing the hybrid organic-inorganic material in selected areas, and depositing an electrically conductive material in the selected areas, wherein one of the precursors is a compound of the general formula R1R2R3SiR4, wherein R1, R2, R3 are each bound to the Si and are independently an aryl group, a cross linkable group, or an alkyl group having from 1-14 carbons, and wherein R4 is selected from the group consisting of an alkoxy group, an acyloxy group, an —OH group or a halogen. Also disclosed is a method for forming a hybrid organic inorganic layer on a substrate, comprising: hydrolyzing a silane selected from the group consisting of a tetraalkoxysilane, a trialkoxysilane, a trichlorosilane, a dialkoxysilane, and a dichlorosilane, with a compound of the general formula: R1R2R4MR5, wherein R1, R2 and R4 are independently an aryl, alkyl, alkenyl, epoxy or alkynyl group, wherein at least one of R1, R2 and R4 is fully or partially fluorinated, wherein M is selected from group 14 of the periodic table, and wherein R5 is either an alkoxy group, OR3, or a halogen (X).

摘要翻译： 公开了一种用于制造集成电路的方法，其包括将导电材料和混合有机无机介电材料的交替区域沉积在基底上，其中介电材料的区域通过水解多个前体而形成，以形成由 氧化硅主链并具有与主链结合的有机取代基，并将杂化有机无机材料沉积在基材上，去除所选区域中的杂化有机 - 无机材料，以及在选定区域中沉积导电材料，其中 前体是通式为R 1 R 2 R 3 SiR 4的化合物，其中R 1，R 2，R 3各自与Si结合，独立地为芳基，可交联基团或具有1-14个碳原子的烷基，其中R4为 选自烷氧基，酰氧基，-OH基或卤素。 还公开了一种在基材上形成杂化有机无机层的方法，包括：将通式（IV）的化合物与四烷氧基硅烷，三烷氧基硅烷，三氯硅烷，二烷氧基硅烷和二氯硅烷选自下列的硅烷水解： ：R1R2R4MR5，其中R1，R2和R4独立地是芳基，烷基，烯基，环氧基或炔基，其中R1，R2和R4中的至少一个是完全或部分氟化的，其中M选自周期表的第14族 ，其中R 5为烷氧基，OR 3或卤素（X）。

公开(公告)号：US07256467B2

公开(公告)日：2007-08-14

申请号：US10453933

申请日：2003-06-04

申请人： Jason S. Reid ,  Nungavram S. Viswanathan

发明人： Jason S. Reid ,  Nungavram S. Viswanathan

IPC分类号： H01L21/00 ,  H01L29/82

CPC分类号： C09D4/00 ,  B81B3/0005 ,  B81C1/0096 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00 ,  C08G77/00 ,  C08G77/04 ,  C08G77/24

摘要： A micro-electromechanical device is formed on a substrate. The device has sliding, abrading or impacting surfaces. At least one of these surfaces is covered with an anti-stiction material. The anti-stiction material is provided from a slicon compound precursor (e.g. silane, silanol) or multiple silicon compound precursors. Preferably the precursor(s) is fluorinated—more preferably perfluorinated, and is deposited with a solvent as a low molecular weight oligomer or in monomeric form. Examples include silanes (fluorinated or not) with aromatic or polycyclic ring sturctures, and/or silanes (fluorinated or not) having alkenyl, alkynyl, epoxy or acrylate groups. Mixtures either or both of these groups with alkyl chain silanes (preferably fluorinated) are also contemplated.

摘要翻译： 在基板上形成微机电装置。 该装置具有滑动，研磨或冲击表面。 这些表面中的至少一个被抗静电材料覆盖。 抗粘性材料由Slico化合物前体（例如硅烷，硅烷醇）或多种硅化合物前体提供。 优选地，前体被氟化 - 更优选全氟化，并且以溶剂作为低分子量低聚物或以单体形式沉积。 实例包括具有芳族或多环结构的硅烷（氟化或非氟化），和/或具有烯基，炔基，环氧基或丙烯酸酯基团的硅烷（氟化或非氟化）。 这些基团中的一个或两个与烷基链硅烷（优选氟化）混合也是可以预料的。

公开(公告)号：US07071520B2

公开(公告)日：2006-07-04

申请号：US10176478

申请日：2002-06-21

申请人： Jason S. Reid

发明人： Jason S. Reid

IPC分类号： G01L1/12

CPC分类号： B81B3/0078 ,  B81B2201/045 ,  B81B2203/0118

摘要： MEMS devices are provided that are capable of movement due to a flexible portion formed of unique materials for this purpose. The MEMS device can have a flexible portion formed of a nitride or oxynitride of at least one transition metal, and formed of a nitride or oxynitride of at least one metalloid or near metalloid; a flexible portion formed of a single transition metal nitride or oxynitride and in the absence of any other metal or metalloid nitrides; a flexible portion formed of one or more late transition metal nitrides or oxynitrides; a flexible portion formed of a single transition metal in nitride form, and an additional metal substantially in elemental form; or a flexible portion formed of at least one metalloid nitride or oxynitride. The MEMS devices can be any device, though preferably one with a flexible portion such as an accelerometer, DC relay or RF switch, optical cross connect or optical switch, or micromirror arrays for direct view and projection displays. The flexible portion (e.g. the hinge of the micromirror) is preferably formed by sputtering a metal and/or metalloid target in nitrogen ambient so as to result in a sputtered hinge. It is also possible to form other parts of the MEMS device (e.g structural parts that do not flex).

公开(公告)号：US08148707B2

公开(公告)日：2012-04-03

申请号：US12637644

申请日：2009-12-14

申请人： Stanford Ovshinsky ,  Tyler Lowrey ,  James D. Reed ,  Semyon D. Savransky ,  Jason S. Reid ,  Kuo-Wei Chang

发明人： Stanford Ovshinsky ,  Tyler Lowrey ,  James D. Reed ,  Semyon D. Savransky ,  Jason S. Reid ,  Kuo-Wei Chang

IPC分类号： H01L29/02 ,  H01L29/18 ,  H01L45/00

CPC分类号： H01L45/141 ,  C01B19/002 ,  C01P2006/40 ,  H01L27/2427 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1625 ,  H01L45/1641

摘要： A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an atomic percentage of germanium in the range of 10 and 40, an atomic percentage of silicon in the range of 5 and 18, an atomic percentage of nitrogen in the range of 0 and 10, and an alloy of sulfur, selenium, and tellurium. A ratio of sulfur to selenium in the range of 0.25 and 4, and a ration of sulfur to tellurium in the alloy of sulfur, selenium, and tellurium is in the range of 0.11 and 1.

摘要翻译： 优化超声波阈值开关的操作参数的硫族化合物包括在9至39范围内的砷的原子百分比，10和40范围内的锗的原子百分比，5的原子百分比在5的范围内， 18，氮的原子百分比在0和10的范围内，以及硫，硒和碲的合金。 硫与硒的比例在0.25和4的范围内，硫，硒和碲合金中硫与碲的比例在0.11和1的范围内。