Invention Grant
- Patent Title: Photodetector for backside-illuminated sensor
- Patent Title (中): 背面照明传感器的光电探测器
-
Application No.: US12651236Application Date: 2009-12-31
-
Publication No.: US07939903B2Publication Date: 2011-05-10
- Inventor: Tzu-Hsuan Hsu , Dun-Nian Yaung , Ching-Chun Wang
- Applicant: Tzu-Hsuan Hsu , Dun-Nian Yaung , Ching-Chun Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L31/062
Abstract:
A backside-illuminated sensor including a semiconductor substrate. The semiconductor substrate has a front surface and a back surface. A plurality of pixels are formed on the front surface of the semiconductor substrate. At least one pixel includes a photogate structure. The photogate structure has a metal gate that includes a reflective layer.
Public/Granted literature
- US20100102411A1 PHOTODETECTOR FOR BACKSIDE-ILLUMINATED SENSOR Public/Granted day:2010-04-29
Information query
IPC分类:
