发明授权
- 专利标题： Photodetector for backside-illuminated sensor
- 专利标题（中）： 背面照明传感器的光电探测器
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申请号： US12651236申请日： 2009-12-31
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公开(公告)号： US07939903B2公开(公告)日： 2011-05-10
- 发明人: Tzu-Hsuan Hsu , Dun-Nian Yaung , Ching-Chun Wang
- 申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Ching-Chun Wang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L31/00
- IPC分类号： H01L31/00 ; H01L31/062
摘要：
A backside-illuminated sensor including a semiconductor substrate. The semiconductor substrate has a front surface and a back surface. A plurality of pixels are formed on the front surface of the semiconductor substrate. At least one pixel includes a photogate structure. The photogate structure has a metal gate that includes a reflective layer.
公开/授权文献
- US20100102411A1 PHOTODETECTOR FOR BACKSIDE-ILLUMINATED SENSOR 公开/授权日：2010-04-29
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