发明授权
- 专利标题: Semiconductor integrated circuit device minimizing leakage current
- 专利标题(中): 半导体集成电路器件使漏电流最小化
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申请号: US11592978申请日: 2006-11-06
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公开(公告)号: US07940577B2公开(公告)日: 2011-05-10
- 发明人: Kenjyu Shimogawa , Hiroshi Furuta
- 申请人: Kenjyu Shimogawa , Hiroshi Furuta
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Foley & Lardner LLP
- 优先权: JP2005-329692 20051115; JP2006-260834 20060926
- 主分类号: G11C7/00
- IPC分类号: G11C7/00
摘要:
The semiconductor integrated circuit device includes a voltage control circuit that generates a control voltage for deactivating a field effect transistor by a gate voltage. The voltage control circuit controls a voltage so as to substantially minimize the leakage current which flows when the field effect transistor is inactive with respect to a device temperature.
公开/授权文献
- US20070109700A1 Semiconductor integrated circuit device 公开/授权日:2007-05-17
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