Invention Grant
- Patent Title: Programmable self-test for random access memories
- Patent Title (中): 可编程自检随机存取存储器
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Application No.: US12198949Application Date: 2008-08-27
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Publication No.: US07941713B2Publication Date: 2011-05-10
- Inventor: Chingwen Chang , Wei-Chia Cheng , Shih-Chieh Lin
- Applicant: Chingwen Chang , Wei-Chia Cheng , Shih-Chieh Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
A system that provides large instruction sets for testing memory yet reduces area overhead is disclosed. The system for testing a memory of an integrated circuit comprises a set of registers providing element based programmability for a plurality of tests, wherein each test includes a plurality of test elements; a finite state machine for receiving a plurality of test instructions from the set of registers, wherein the finite state machine dispatches signals instructing a test pattern generator to generate a test pattern; a memory control module for applying the generated test pattern to the memory; and a comparator module for comparing a response received from the memory to a stored, known response.
Public/Granted literature
- US20100058126A1 Programmable Self-Test for Random Access Memories Public/Granted day:2010-03-04
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