发明授权
US07944567B2 Semiconductor light emitting element, light source using the semiconductor light emitting element, and optical tomography imaging apparatus 有权
半导体发光元件,使用半导体发光元件的光源和光学层析成像装置

  • 专利标题: Semiconductor light emitting element, light source using the semiconductor light emitting element, and optical tomography imaging apparatus
  • 专利标题(中): 半导体发光元件,使用半导体发光元件的光源和光学层析成像装置
  • 申请号: US11633473
    申请日: 2006-12-05
  • 公开(公告)号: US07944567B2
    公开(公告)日: 2011-05-17
  • 发明人: Hideki Asano
  • 申请人: Hideki Asano
  • 申请人地址: JP Tokyo
  • 专利权人: FUJIFILM Corporation
  • 当前专利权人: FUJIFILM Corporation
  • 当前专利权人地址: JP Tokyo
  • 代理机构: Sughrue Mion, PLLC
  • 优先权: JP2005-350158 20051205
  • 主分类号: G01B11/02
  • IPC分类号: G01B11/02 H01S5/00
Semiconductor light emitting element, light source using the semiconductor light emitting element, and optical tomography imaging apparatus
摘要:
A semiconductor light emitting element is equipped with a layered structure including an active layer, and electrode layers at the upper and lower surfaces thereof. At least one of the upper and lower electrode layers is divided into at least two electrodes, which are separated in the wave guiding direction of light. The active layer is structured to have different gain wavelengths along the wave guiding direction, to emit light having different spectra from each region corresponding to each of the at least two electrodes. The spectral distribution of output light is enabled to be varied by individually varying the current injected by each of the at least two divided electrodes.
信息查询
0/0