Invention Grant
US07944567B2 Semiconductor light emitting element, light source using the semiconductor light emitting element, and optical tomography imaging apparatus 有权
半导体发光元件,使用半导体发光元件的光源和光学层析成像装置

  • Patent Title: Semiconductor light emitting element, light source using the semiconductor light emitting element, and optical tomography imaging apparatus
  • Patent Title (中): 半导体发光元件,使用半导体发光元件的光源和光学层析成像装置
  • Application No.: US11633473
    Application Date: 2006-12-05
  • Publication No.: US07944567B2
    Publication Date: 2011-05-17
  • Inventor: Hideki Asano
  • Applicant: Hideki Asano
  • Applicant Address: JP Tokyo
  • Assignee: FUJIFILM Corporation
  • Current Assignee: FUJIFILM Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Sughrue Mion, PLLC
  • Priority: JP2005-350158 20051205
  • Main IPC: G01B11/02
  • IPC: G01B11/02 H01S5/00
Semiconductor light emitting element, light source using the semiconductor light emitting element, and optical tomography imaging apparatus
Abstract:
A semiconductor light emitting element is equipped with a layered structure including an active layer, and electrode layers at the upper and lower surfaces thereof. At least one of the upper and lower electrode layers is divided into at least two electrodes, which are separated in the wave guiding direction of light. The active layer is structured to have different gain wavelengths along the wave guiding direction, to emit light having different spectra from each region corresponding to each of the at least two electrodes. The spectral distribution of output light is enabled to be varied by individually varying the current injected by each of the at least two divided electrodes.
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