发明授权
- 专利标题: Method of manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US12548471申请日: 2009-08-27
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公开(公告)号: US07947568B2公开(公告)日: 2011-05-24
- 发明人: Keiji Sakamoto , Takashi Ogura , Masashige Moritoki
- 申请人: Keiji Sakamoto , Takashi Ogura , Masashige Moritoki
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Young & Thompson
- 优先权: JP2008-330035 20081225
- 主分类号: H01L21/76
- IPC分类号: H01L21/76
摘要:
A method of manufacturing a semiconductor device includes a process of forming a STI trench in a substrate, a process of forming a thermal oxide film on a sidewall and a bottom surface of the STI trench, a process of performing a plasma treatment on a surface of the thermal oxide film that is located at a bottom portion of the STI trench, and a process of forming an insulating film in the STI trench using a CVD method.
公开/授权文献
- US20100167493A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日:2010-07-01