发明授权
- 专利标题： Method of manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US12548471申请日： 2009-08-27
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公开(公告)号： US07947568B2公开(公告)日： 2011-05-24
- 发明人: Keiji Sakamoto , Takashi Ogura , Masashige Moritoki
- 申请人： Keiji Sakamoto , Takashi Ogura , Masashige Moritoki
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Young & Thompson
- 优先权： JP2008-330035 20081225
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A method of manufacturing a semiconductor device includes a process of forming a STI trench in a substrate, a process of forming a thermal oxide film on a sidewall and a bottom surface of the STI trench, a process of performing a plasma treatment on a surface of the thermal oxide film that is located at a bottom portion of the STI trench, and a process of forming an insulating film in the STI trench using a CVD method.
公开/授权文献
- US20100167493A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日：2010-07-01