发明授权
- 专利标题： Method of manufacturing hybrid structure of multi-layer substrates and hybrid structure thereof
- 专利标题（中）： 制造多层基板的混合结构及其混合结构的方法
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申请号： US12549289申请日： 2009-08-27
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公开(公告)号： US07948079B2公开(公告)日： 2011-05-24
- 发明人: Chih-kuang Yang
- 申请人： Chih-kuang Yang
- 申请人地址： TW Hsinchu
- 专利权人： Princo Corp.
- 当前专利权人： Princo Corp.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/40
- IPC分类号： H01L29/40
摘要：
Disclosed is a method of manufacturing a hybrid structure of multi-layer substrates. The method comprises steps of: separating a border district of at least one metal layer connecting with a border district of the corresponding dielectric layer from adjacent metal layers and adjacent dielectric layers for each multi-layer substrate and connecting a separated border of a metal layer of one multi-layer substrate with a separated border district of a metal layer of another multi-layer substrate to form a connection section. The hybrid structure comprises at least a first multi-layer substrate and a second multi-layer substrate. At least one first metal layer is connected with at least one second metal layer to form a connection section.
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