发明授权
- 专利标题： Flash memory device and method of changing block size in the same using address shifting
- 专利标题（中）： 闪存设备和使用地址转换改变块大小的方法
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申请号： US11978582申请日： 2007-10-30
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公开(公告)号： US07949819B2公开(公告)日： 2011-05-24
- 发明人: Sang-chul Kang , Jin-yub Lee
- 申请人： Sang-chul Kang , Jin-yub Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2006-0129664 20061218
- 主分类号： G06F12/00
- IPC分类号： G06F12/00 ; G06F13/00 ; G06F13/28 ; G06F9/26 ; G06F9/34
摘要：
According to an example embodiment, a method of changing a block size in a flash memory device having a multi-plane scheme may include decoding an external input address and changing the block size of the flash memory device from a first block size to a second block size. The external input address may be decoded into a block address and a page address. The block size of the flash memory device may be changed from the first block size to the second block size by shifting at least one bit of the block address to the page address or shifting at least one bit of the page address to the block address.
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