发明授权
- 专利标题： Method for simultaneously tensile and compressive straining the channels of NMOS and PMOS transistors respectively
- 专利标题（中）： 分别同时拉伸和压缩NMOS和PMOS晶体管的通道的方法
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申请号： US12505161申请日： 2009-07-17
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公开(公告)号： US07951659B2公开(公告)日： 2011-05-31
- 发明人: Younes Lamrani , Jean-Charles Barbe , Marek Kostrzewa
- 申请人： Younes Lamrani , Jean-Charles Barbe , Marek Kostrzewa
- 申请人地址： FR Paris
- 专利权人： Commissariat a l'Energie Atomique
- 当前专利权人： Commissariat a l'Energie Atomique
- 当前专利权人地址： FR Paris
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： FR0854946 20080721
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/84 ; H01L21/337 ; H01L21/76 ; H01L21/20 ; H01L21/36
摘要：
A method of forming a microelectronic device comprising, on a same support: at least one semi-conductor zone strained according to a first strain, and at least one semi-conductor zone strained according to a second strain, different to the first strain, comprising: the formation of semi-conductor zones above a pre-strained layer, then trenches extending through the thickness of the pre-strained layer, the dimensions and the layout of the semi-conductor zones as a function of the layout and the dimensions of the trenches being so as to obtain semi-conductor zones having a strain of the same type as that of the pre-strained layer and semi-conductor zones having a strain of a different type to that of the pre-strained layer.
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