Invention Grant
- Patent Title: Integrated etch and supercritical CO2 process and chamber design
- Patent Title (中): 集成蚀刻和超临界CO2工艺和腔室设计
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Application No.: US11552364Application Date: 2006-10-24
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Publication No.: US07951723B2Publication Date: 2011-05-31
- Inventor: Ching-Ya Wang , Weng-Jin Wu , Henry Lo , Jean Wang
- Applicant: Ching-Ya Wang , Weng-Jin Wu , Henry Lo , Jean Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/461
- IPC: H01L21/461
Abstract:
A method and apparatus involve providing a substrate having a dielectric layer formed thereon, forming a photoresist mask over the dielectric layer, the photoresist mask defining an opening, etching the dielectric layer through the at least one opening in the photoresist mask, treating a portion of the photoresist mask with an etching species, and removing the treated photoresist mask with a supercritical fluid. The etching, treating, and removing can be performed in one chamber.
Public/Granted literature
- US20080108223A1 Integrated Etch and Supercritical CO2 Process and Chamber Design Public/Granted day:2008-05-08
Information query
IPC分类:
