发明授权
- 专利标题: Non-volatile semiconductor storage system
- 专利标题(中): 非易失性半导体存储系统
-
申请号: US12507366申请日: 2009-07-22
-
公开(公告)号: US07952958B2公开(公告)日: 2011-05-31
- 发明人: Kosuke Yanagidaira , Toshihiro Suzuki , Naoya Tokiwa
- 申请人: Kosuke Yanagidaira , Toshihiro Suzuki , Naoya Tokiwa
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2008-204591 20080807
- 主分类号: G11C8/00
- IPC分类号: G11C8/00
摘要:
There is provided a non-volatile memory having electrically rewritable non-volatile memory cells arranged therein. A controller controls operation at the non-volatile memory. The non-volatile memory comprises a status output section configured to output status information indicating a status of read operation, write operation or erase operation in the non-volatile memory cell. The controller comprises a control signal generating section configured to output a control signal for a certain operation in the non-volatile memory, and a control signal switching section configured to instruct the control signal generating section to switch the control signal based on the status information.
公开/授权文献
- US20100034025A1 NON-VOLATILE SEMICONDUCTOR STORAGE SYSTEM 公开/授权日:2010-02-11
信息查询