发明授权
- 专利标题: Method of reducing stacking faults through annealing
- 专利标题(中): 通过退火减少堆垛层错的方法
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申请号: US12839588申请日: 2010-07-20
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公开(公告)号: US07956417B2公开(公告)日: 2011-06-07
- 发明人: Yun-Yu Wang , Christopher D. Sheraw , Anthony G. Domenicucci , Linda Black , Judson R. Holt , David M. Fried
- 申请人: Yun-Yu Wang , Christopher D. Sheraw , Anthony G. Domenicucci , Linda Black , Judson R. Holt , David M. Fried
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Ian D. MacKinnon
- 主分类号: H01L27/12
- IPC分类号: H01L27/12
摘要:
Accordingly, in one embodiment of the invention, a method is provided for reducing stacking faults in an epitaxial semiconductor layer. In accordance with such method, a substrate is provided which includes a first single-crystal semiconductor region including a first semiconductor material, the first semiconductor region having a crystal orientation. An epitaxial layer including the first semiconductor material is grown on the first semiconductor region, the epitaxial layer having the crystal orientation. The substrate is then annealed with the epitaxial layer at a temperature greater than 1100 degrees Celsius in an ambient including hydrogen, whereby the step of annealing reduces stacking faults in the epitaxial layer.
公开/授权文献
- US20100283089A1 METHOD OF REDUCING STACKING FAULTS THROUGH ANNEALING 公开/授权日:2010-11-11