Aspects of the invention include methods for producing purified semiconductor or metallic materials. In one embodiment, the methods include admixing a particulate composition of a material, for instance, a metal, with a metal halide to produce a metal-metal halide admixture. The admixture is then heated to a temperature that is above the material's melting point in a container that is chemically and physically stable at that temperature. The molten admixture is allowed to segregate into a lower of the material and an layer of the metal halide and cooled. The metal halide is then separated from the material and a purified semiconductor or metallic material is thereby produced. Also provided are purified material crystals, shaped ingots and/or taper, sheet, or ribbons produced by such methods, as well as the silicon chips and solar panels in which such products are employed.