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    Methods for producing consolidated materials
    4.
    发明授权
    Methods for producing consolidated materials 有权
    生产合并材料的方法

    公开(公告)号：US07959707B2

    公开(公告)日：2011-06-14

    申请号：US11799387

    申请日：2007-04-30

    申请人： Angel Sanjurjo ,  Kai-Hung Lau ,  Xiaobing Xie ,  Anoop Nagar

    发明人： Angel Sanjurjo ,  Kai-Hung Lau ,  Xiaobing Xie ,  Anoop Nagar

    IPC分类号： B22F9/20

    CPC分类号： C22B9/16 ,  C01B33/037 ,  C22B9/02 ,  C22B9/106 ,  C22B34/1295 ,  Y02P10/234

    摘要： Aspects of the invention include methods for producing purified semiconductor or metallic materials. In one embodiment, the methods include admixing a particulate composition of a material, for instance, a metal, with a metal halide to produce a metal-metal halide admixture. The admixture is then heated to a temperature that is above the material's melting point in a container that is chemically and physically stable at that temperature. The molten admixture is allowed to segregate into a lower of the material and an layer of the metal halide and cooled. The metal halide is then separated from the material and a purified semiconductor or metallic material is thereby produced. Also provided are purified material crystals, shaped ingots and/or taper, sheet, or ribbons produced by such methods, as well as the silicon chips and solar panels in which such products are employed.

    摘要翻译： 本发明的方面包括用于生产纯化的半导体或金属材料的方法。 在一个实施方案中，所述方法包括将诸如金属的材料的颗粒组合物与金属卤化物混合以产生金属 - 金属卤化物混合物。 然后将混合物加热到在该温度下在化学和物理上稳定的容器中材料的熔点之上的温度。 使熔融混合物分离成材料的下部和金属卤化物层并冷却。 然后将金属卤化物与材料分离，从而制得纯化的半导体或金属材料。 还提供了通过这种方法制造的纯化材料晶体，成形锭和/或锥形，片状或带状物，以及其中使用这种产品的硅芯片和太阳能电池板。

    Methods for producing consolidated materials
    5.
    发明申请
    Methods for producing consolidated materials 有权
    生产合并材料的方法

    公开(公告)号：US20070266826A1

    公开(公告)日：2007-11-22

    申请号：US11799387

    申请日：2007-04-30

    申请人： Angel Sanjurjo ,  Kai-Hung Lau ,  Xiaobing Xie ,  Anoop Nagar

    发明人： Angel Sanjurjo ,  Kai-Hung Lau ,  Xiaobing Xie ,  Anoop Nagar

    IPC分类号： B22F9/02

    CPC分类号： C22B9/16 ,  C01B33/037 ,  C22B9/02 ,  C22B9/106 ,  C22B34/1295 ,  Y02P10/234

    摘要： Aspects of the invention include methods for producing purified semiconductor or metallic materials. In one embodiment, the methods include admixing a particulate composition of a material, for instance, a metal, with a metal halide to produce a metal-metal halide admixture. The admixture is then heated to a temperature that is above the material's melting point in a container that is chemically and physically stable at that temperature. The molten admixture is allowed to segregate into a lower of the material and an layer of the metal halide and cooled. The metal halide is then separated from the material and a purified semiconductor or metallic material is thereby produced. Also provided are purified material crystals, shaped ingots and/or taper, sheet, or ribbons produced by such methods, as well as the silicon chips and solar panels in which such products are employed.

    摘要翻译： 本发明的方面包括用于生产纯化的半导体或金属材料的方法。 在一个实施方案中，所述方法包括将诸如金属的材料的颗粒组合物与金属卤化物混合以产生金属 - 金属卤化物混合物。 然后将混合物加热到在该温度下在化学和物理上稳定的容器中材料的熔点之上的温度。 使熔融混合物分离成材料的下部和金属卤化物层并冷却。 然后将金属卤化物与材料分离，从而制得纯化的半导体或金属材料。 还提供了通过这种方法制造的纯化材料晶体，成形锭和/或锥形，片状或带状物，以及其中使用这种产品的硅芯片和太阳能电池板。