发明授权
- 专利标题： Method for forming a double embossing structure
- 专利标题（中）： 用于形成双压花结构的方法
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申请号： US11491117申请日： 2006-07-24
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公开(公告)号： US07960269B2公开(公告)日： 2011-06-14
- 发明人: Hsin-Jung Lo , Mou-Shiung Lin , Chiu-Ming Chou , Chien-Kang Chou
- 申请人： Hsin-Jung Lo , Mou-Shiung Lin , Chiu-Ming Chou , Chien-Kang Chou
- 申请人地址： TW Hsin-Chu
- 专利权人： Megica Corporation
- 当前专利权人： Megica Corporation
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： McDermott Will & Emery, LLP
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method for fabricating a circuitry component comprises depositing a first metal layer over a substrate; forming a first pattern-defining layer over said first metal layer, a first opening in said first pattern-defining layer exposing said first metal layer; depositing a second metal layer over said first metal layer exposed by said first opening; removing said first pattern-defining layer; forming a second pattern-defining layer over said second metal layer, a second opening in said second pattern-defining layer exposing said second metal layer; depositing a third metal layer over said second metal layer exposed by said second opening; removing said second pattern-defining layer; removing said first metal layer not under said second metal layer; and forming a polymer layer over said second metal layer, wherein said third metal layer is used as a metal bump bonded to an external circuitry.
公开/授权文献
- US20070045855A1 Method for forming a double embossing structure 公开/授权日：2007-03-01