发明授权
US07960292B2 Method of fabricating zinc oxide film having matching crystal orientation to silicon substrate
有权
制造与硅衬底具有匹配的晶体取向的氧化锌膜的方法
- 专利标题： Method of fabricating zinc oxide film having matching crystal orientation to silicon substrate
- 专利标题（中）： 制造与硅衬底具有匹配的晶体取向的氧化锌膜的方法
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申请号： US12434638申请日： 2009-05-02
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公开(公告)号： US07960292B2公开(公告)日： 2011-06-14
- 发明人: Tsun-Neng Yang
- 申请人： Tsun-Neng Yang
- 申请人地址： TW Taoyuan
- 专利权人： Atomic Energy Council-Institute of Nuclear Energy Research
- 当前专利权人： Atomic Energy Council-Institute of Nuclear Energy Research
- 当前专利权人地址： TW Taoyuan
- 代理机构： Jackson IPG PLLC
- 代理商 Demian K. Jackson
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/205
摘要：
A zinc oxide (ZnO) film is fabricated. Metal-organic chemical vapor deposition (MOCVD) is used to obtain the film with few defects, high integrity and low cost through an easy procedure. The ZnO film above a silicon substrate has a matching crystal orientation to the substrate. Thus, the ZnO film is fit for ultraviolet light-emitting diodes (UV LED), solar cells and related laser devices.
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