发明授权
US07960328B2 Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
有权
用于回收其上具有低k电介质材料的半导体晶片的组合物和方法
- 专利标题： Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
- 专利标题（中）： 用于回收其上具有低k电介质材料的半导体晶片的组合物和方法
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申请号： US12093290申请日： 2006-11-09
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公开(公告)号： US07960328B2公开(公告)日： 2011-06-14
- 发明人: Pamela M. Visintin , Ping Jiang , Michael B. Korzenski , Mackenzie King
- 申请人： Pamela M. Visintin , Ping Jiang , Michael B. Korzenski , Mackenzie King
- 申请人地址： US CT Danbury
- 专利权人： Advanced Technology Materials, Inc.
- 当前专利权人： Advanced Technology Materials, Inc.
- 当前专利权人地址： US CT Danbury
- 代理机构： Moore & Van Allen, PLLC
- 代理商 Tristan A. Fuierer; Chih-Sheng Lin
- 国际申请： PCT/US2006/060696 WO 20061109
- 国际公布： WO2007/111694 WO 20071004
- 主分类号： C11D7/32
- IPC分类号： C11D7/32
摘要：
A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.
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