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1.发明申请Composition and Method for Recycling Semiconductor Wafers Having Low-K Dielectric Materials Thereon 有权用于回收具有低K电介质材料的半导体晶片的组合物和方法公开(公告)号：US20080261847A1
公开(公告)日：2008-10-23
申请号：US12093290
申请日：2006-11-09
CPC分类号： C09K13/08 , H01L21/02032 , H01L21/02079 , H01L21/31111 , H01L21/32134
摘要： A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.
摘要翻译： 一种去除组合物和用于从其上具有相同材料的废弃微电子器件结构去除低k电介质材料，蚀刻停止材料和/或金属堆叠材料的去除组合物和方法。 除去组合物包括氢氟酸。 该组合物至少部分地从其上具有相同的微电子器件结构的表面去除材料，用于所述结构的再循环和/或再利用，而不会损坏半导体结构中使用的下面的多晶硅或裸硅层 。
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2.发明授权Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon 有权用于回收其上具有低k电介质材料的半导体晶片的组合物和方法公开(公告)号：US07960328B2
公开(公告)日：2011-06-14
申请号：US12093290
申请日：2006-11-09
IPC分类号： C11D7/32
CPC分类号： C09K13/08 , H01L21/02032 , H01L21/02079 , H01L21/31111 , H01L21/32134
摘要： A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.
摘要翻译： 一种去除组合物和用于从其上具有相同材料的废弃微电子器件结构去除低k电介质材料，蚀刻停止材料和/或金属堆叠材料的去除组合物和方法。 除去组合物包括氢氟酸。 该组合物至少部分地从其上具有相同的微电子器件结构的表面去除材料，用于所述结构的再循环和/或再利用，而不会损坏半导体结构中使用的下面的多晶硅或裸硅层 。
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3.发明授权Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon 有权用于回收其上具有低k电介质材料的半导体晶片的组合物和方法公开(公告)号：US08642526B2
公开(公告)日：2014-02-04
申请号：US13103536
申请日：2011-05-09
IPC分类号： G03F7/42
CPC分类号： C09K13/08 , H01L21/02032 , H01L21/02079 , H01L21/31111 , H01L21/32134
摘要： A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.
摘要翻译： 一种去除组合物和用于从其上具有相同材料的废弃微电子器件结构去除低k电介质材料，蚀刻停止材料和/或金属堆叠材料的去除组合物和方法。 除去组合物包括氢氟酸。 该组合物至少部分地从其上具有相同的微电子器件结构的表面去除材料，用于所述结构的再循环和/或再利用，而不会损坏半导体结构中使用的下面的多晶硅或裸硅层 。
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4.发明申请COMPOSITION AND METHOD FOR RECYCLING SEMICONDUCTOR WAFERS HAVING LOW-K DIELECTRIC MATERIALS THEREON 有权用于回收具有低K介电材料的半导体波长的组合物和方法公开(公告)号：US20110275164A1
公开(公告)日：2011-11-10
申请号：US13103536
申请日：2011-05-09
IPC分类号： H01L21/306 , C09K13/06
CPC分类号： C09K13/08 , H01L21/02032 , H01L21/02079 , H01L21/31111 , H01L21/32134
摘要： A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.
摘要翻译： 一种去除组合物和用于从其上具有相同材料的废弃微电子器件结构去除低k电介质材料，蚀刻停止材料和/或金属堆叠材料的去除组合物和方法。 除去组合物包括氢氟酸。 该组合物至少部分地从其上具有相同的微电子器件结构的表面去除材料，用于所述结构的再循环和/或再利用，而不会损坏半导体结构中使用的下面的多晶硅或裸硅层 。
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5.发明申请SIMULTANEOUS INORGANIC, ORGANIC AND BYPRODUCT ANALYSIS IN ELECTROCHEMICAL DEPOSITION SOLUTIONS 审中-公开电化学沉积解决方案中的同时无机，有机和副产物分析公开(公告)号：US20070261963A1
公开(公告)日：2007-11-15
申请号：US11670507
申请日：2007-02-02
申请人： Jianwen Han , Mackenzie King , Glenn Tom , Steven Lurcott
发明人： Jianwen Han , Mackenzie King , Glenn Tom , Steven Lurcott
IPC分类号： C25D21/00
摘要： Real-time analysis of electrochemical deposition (ECD) metal plating solutions is described, for the purpose of reducing plating defects and achieving high quality metal deposition. Improved plating protocols are utilized for increasing potential signal strength and reducing the time required for each measurement cycle. New methods and algorithms for simultaneously determining concentrations of organic additives, inorganic additives, and/or byproducts in a sample ECD solution are described. In one aspect, a method is provided for simultaneously determining concentrations of all organic additives, inorganic additives, and/or byproducts within a single experimental run by using a single analytical cell, while interactions between such additives are properly accounted for.
摘要翻译： 描述了电化学沉积（ECD）金属电镀溶液的实时分析，目的是减少电镀缺陷并实现高质量的金属沉积。 改进的电镀方案用于增加潜在的信号强度并减少每个测量周期所需的时间。 描述了用于同时测定样品ECD溶液中有机添加剂，无机添加剂和/或副产物浓度的新方法和算法。 在一个方面，提供了一种方法，用于通过使用单个分析单元同时确定单个实验运行中的所有有机添加剂，无机添加剂和/或副产物的浓度，同时适当地考虑了这些添加剂之间的相互作用。
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公开(公告)号：US20070138102A1
公开(公告)日：2007-06-21
申请号：US11524079
申请日：2006-09-20
申请人： Mackenzie King
发明人： Mackenzie King
IPC分类号： C02F1/28
CPC分类号： B01J20/20 , B01D53/261 , B01D2253/10 , B01D2253/308 , B01J20/046 , B01J20/28078 , B01J20/3071 , B01J20/3078 , B01J20/3204 , B01J20/3236 , C01B7/0718 , C02F1/283 , C02F1/288
摘要： A composition comprising a magnesium halide coated macroporous carbonaceous substrate is provided for effecting moisture removal from a hydrogen halide fluid. Moisture removal is effected by intimately contacting the hydrogen halide fluid with the magnesium halide coated macroporous carbonaceous substrate and separating the fluid from the coated substrate.
摘要翻译： 提供包含卤化镁涂覆的大孔含碳底物的组合物用于从卤化氢流体中除去水分。 通过将卤化氢流体与卤化镁涂覆的大孔含碳底物紧密接触并从涂覆的基底分离流体来实现除湿。
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7.发明申请公开(公告)号：US20060102475A1
公开(公告)日：2006-05-18
申请号：US11318129
申请日：2005-12-23
申请人： Jianwen Han , Mackenzie King
发明人： Jianwen Han , Mackenzie King
IPC分类号： G01N27/416
摘要： The present invention relates to a method and apparatus for determining organic additive concentrations in a sample electrolytic solution, preferably a copper electroplating solution, by measuring the double layer capacitance of a measuring electrode in such sample solution. Specifically, the present invention utilizes the correlation between double layer capacitance and the organic additive concentration for concentration mapping, based on the double layer capacitance measured for the sample electrolytic solution.
摘要翻译： 本发明涉及一种通过测量这种样品溶液中的测量电极的双层电容来测定样品电解溶液（优选铜电镀溶液）中的有机添加剂浓度的方法和装置。 具体地说，本发明基于对样品电解液测量的双层电容，利用双层电容与浓度映射的有机添加剂浓度之间的相关性。
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8.发明申请Passivative chemical mechanical polishing composition for copper film planarization 有权钝化化学机械抛光组合物用于铜膜平面化公开(公告)号：US20050255693A1
公开(公告)日：2005-11-17
申请号：US11117274
申请日：2005-04-28
申请人： Jun Liu , Mackenzie King , Michael Darsillo , Karl Boggs , Jeffrey Roeder , Thomas Baum
发明人： Jun Liu , Mackenzie King , Michael Darsillo , Karl Boggs , Jeffrey Roeder , Thomas Baum
IPC分类号： C09G1/02 , C23F3/00 , C23F3/06 , C23F11/14 , H01L21/321 , H01L21/4763 , H01L21/302 , H01L21/44 , H01L21/461
CPC分类号： C23F3/06 , C09G1/02 , C23F3/00 , C23F11/141 , H01L21/3212
摘要： A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent and a method of use. Such CMP composition may be diluted during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface during CMP processing.
摘要翻译： 含有5-氨基四唑的CMP组合物，例如与氧化剂，螯合剂，研磨剂和溶剂的组合以及使用方法。 在CMP抛光期间可以稀释这种CMP组合物，以尽量减少抛光铜中的凹陷或其他不利平面化缺陷的发生，即使在CMP组合物中以及在CMP期间的铜/ CMP组成界面处存在大量水平的铜离子 处理。
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9.发明授权Attenuated total reflection spectroscopic analysis of organic additives in metal plating solutions 有权金属电镀溶液中有机添加剂的衰减全反射光谱分析公开(公告)号：US06954560B2
公开(公告)日：2005-10-11
申请号：US10331396
申请日：2002-12-30
申请人： Yuriy V. Tolmachev , Mackenzie King
发明人： Yuriy V. Tolmachev , Mackenzie King
CPC分类号： G01N21/552
摘要： The present invention relates to method and apparatus for determining concentrations of organic additives in metal plating solutions, based on infrared spectroscopy, and more specifically attenuated total reflection infrared spectroscopy (ATR-IR).
摘要翻译： 本发明涉及基于红外光谱法，特别是衰减全反射红外光谱（ATR-IR）测定金属电镀溶液中有机添加剂浓度的方法和装置。
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公开(公告)号：US20210177067A1
公开(公告)日：2021-06-17
申请号：US16863561
申请日：2020-04-30
申请人： Mackenzie King
发明人： Mackenzie King
IPC分类号： A41B1/06
摘要： A novel bodysuit is provided. In particular, the present invention provides a bodysuit that presents a neat and kept appearance of a tucked-in shirt without the use of cumbersome elastic garters and loose magnetic attachments. The unique arrangement of the present bodysuit garment allows the user to engage in vigorous activities, such as horseback rodeo riding, while maintaining a kept appearance without dislodgement of fasteners or connectors through inadvertent contact with a saddle horn or other type of exterior object.
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