Invention Grant
- Patent Title: Resistivity sense bias circuits and methods of operating the same
- Patent Title (中): 电阻率偏置电路及其操作方法
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Application No.: US11747681Application Date: 2007-05-11
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Publication No.: US07961418B2Publication Date: 2011-06-14
- Inventor: Naoko Takemoto , Motomu Hashizume
- Applicant: Naoko Takemoto , Motomu Hashizume
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Dawn V. Stephens; Wade James Brady, III; Frederick J. Telecky, Jr.
- Main IPC: G11B5/03
- IPC: G11B5/03

Abstract:
Resistivity sense bias circuits are described herein. An example resistivity sense bias circuit for use with a magnetoresistive read head includes a current biasing portion configured to provide a bias current across the magnetoresistive read head thereby establishing a bias voltage across the magnetoresistive read head, a resistivity sensing portion coupled to the current biasing portion and configured to sense a change in the bias current based on a resistivity change of the magnetoresistive read head, and a voltage source to provide the bias voltage and to adjust the bias voltage in response to the resistivity change of the magnetoresistive read head.
Public/Granted literature
- US20080278859A1 RESISTIVITY SENSE BIAS CIRCUITS AND METHODS OF OPERATING THE SAME Public/Granted day:2008-11-13
Information query
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