发明授权
US07961514B2 Semiconductor device, a method of using a semiconductor device, a programmable memory device, and method of producing a semiconductor device 有权
半导体器件,使用半导体器件的方法,可编程存储器件以及半导体器件的制造方法

  • 专利标题: Semiconductor device, a method of using a semiconductor device, a programmable memory device, and method of producing a semiconductor device
  • 专利标题(中): 半导体器件,使用半导体器件的方法,可编程存储器件以及半导体器件的制造方法
  • 申请号: US12349694
    申请日: 2009-01-07
  • 公开(公告)号: US07961514B2
    公开(公告)日: 2011-06-14
  • 发明人: Michael Bernhard Sommer
  • 申请人: Michael Bernhard Sommer
  • 申请人地址: DE Neubiberg
  • 专利权人: Infineon Technologies AG
  • 当前专利权人: Infineon Technologies AG
  • 当前专利权人地址: DE Neubiberg
  • 代理机构: Slater & Matsil, L.L.P.
  • 主分类号: G11C16/04
  • IPC分类号: G11C16/04
Semiconductor device, a method of using a semiconductor device, a programmable memory device, and method of producing a semiconductor device
摘要:
A semiconductor device is described. A channel area is arranged in a semiconductor substrate between a first contact area and a second contact area. A first programmable structure includes a first control structure. The first programmable structure is arranged such that a conductivity of a first section of the channel area depends on a voltage applicable to the first control structure of the first programmable structure and on an information value stored in the first programmable structure. A second programmable structure includes a second control structure. The second programmable structure is arranged such that a conductivity of a second section of the channel area depends on a voltage applicable to the second control structure of the second programmable structure and on an information value stored in the second programmable structure. The first section and the second section of the channel area are electrically connected in series between the first contact area and the second contact area.
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