- 专利标题： Abrasive, method of polishing target member and process for producing semiconductor device
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申请号： US12170587申请日： 2008-07-10
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公开(公告)号： US07963825B2公开(公告)日： 2011-06-21
- 发明人: Masato Yoshida , Toranosuke Ashizawa , Hiroki Terazaki , Yuuto Ootuki , Yasushi Kurata , Jun Matsuzawa , Kiyohito Tanno
- 申请人： Masato Yoshida , Toranosuke Ashizawa , Hiroki Terazaki , Yuuto Ootuki , Yasushi Kurata , Jun Matsuzawa , Kiyohito Tanno
- 申请人地址： JP Tokyo
- 专利权人： Hitachi Chemical Company, Ltd.
- 当前专利权人： Hitachi Chemical Company, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP9-349240 19971218; JP10-083042 19980330; JP10-083043 19980330
- 主分类号： B24B7/30
- IPC分类号： B24B7/30
摘要：
To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.