发明授权
US07968270B2 Process of making a semiconductor device using multiple antireflective materials
有权
制造使用多种抗反射材料的半导体器件的工艺
- 专利标题： Process of making a semiconductor device using multiple antireflective materials
- 专利标题（中）： 制造使用多种抗反射材料的半导体器件的工艺
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申请号： US12197571申请日： 2008-08-25
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公开(公告)号： US07968270B2公开(公告)日： 2011-06-28
- 发明人: Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
- 申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Connolly Bove Lodge & Hutz LLP
- 代理商 Daniel P. Morris
- 主分类号： G03F7/11
- IPC分类号： G03F7/11 ; G03F7/40
摘要：
A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.
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