Invention Grant
- Patent Title: Nonvolatile memory devices and methods of manufacturing the same
- Patent Title (中): 非易失存储器件及其制造方法
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Application No.: US12026812Application Date: 2008-02-06
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Publication No.: US07968405B2Publication Date: 2011-06-28
- Inventor: Eun-Mi Hong , Kwang-Tae Kim , Ji-Hoon Park
- Applicant: Eun-Mi Hong , Kwang-Tae Kim , Ji-Hoon Park
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2007-0016080 20070215
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
A method of manufacturing a nonvolatile memory device is provided. The method includes forming an isolation layer in a semiconductor substrate defining an active region and forming a molding pattern on the isolation layer. A first conductive layer is formed on a sidewall and a top surface of the molding pattern and on the semiconductor substrate. The first conductive layer on the top surface of the molding pattern is selectively removed forming a conductive pattern. The conductive pattern includes a body plate disposed on the active region and a protrusion which extends from an edge of the body plate onto the sidewall of the molding pattern. The molding pattern is then removed. An inter-gate dielectric layer is formed on the isolation layer and the conductive pattern. Nonvolatile memory devices manufactured using the method are also provided.
Public/Granted literature
- US20080197401A1 NONVOLATILE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2008-08-21
Information query
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