- 专利标题： Semiconductor device and production method thereof
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申请号： US12698303申请日： 2010-02-02
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公开(公告)号： US07968414B2公开(公告)日： 2011-06-28
- 发明人: Hiroyuki Ohta , Takashi Sakuma , Yosuke Shimamune , Akiyoshi Hatada , Akira Katakami , Naoyoshi Tamura
- 申请人： Hiroyuki Ohta , Takashi Sakuma , Yosuke Shimamune , Akiyoshi Hatada , Akira Katakami , Naoyoshi Tamura
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Fujitsu Patent Center
- 优先权： JP2005-182382 20050622; JP2006-162134 20060612
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/336
摘要：
A method of fabricating a semiconductor device is disclosed that is able to suppress a short channel effect and improve carrier mobility. In the method, trenches are formed in a silicon substrate corresponding to a source region and a drain region. When epitaxially growing p-type semiconductor mixed crystal layers to fill up the trenches, the surfaces of the trenches are demarcated by facets, and extended portions of the semiconductor mixed crystal layers are formed between bottom surfaces of second side wall insulating films and a surface of the silicon substrate, and extended portion are in contact with a source extension region and a drain extension region.
公开/授权文献
- US20100129971A1 SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF 公开/授权日：2010-05-27
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