发明授权
US07968435B1 Method and device for growing pseudomorphic AlInAsSb on InAs
失效
用于在InAs上生长伪晶AlInAsSb的方法和装置
- 专利标题： Method and device for growing pseudomorphic AlInAsSb on InAs
- 专利标题（中）： 用于在InAs上生长伪晶AlInAsSb的方法和装置
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申请号： US12491004申请日： 2009-06-24
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公开(公告)号： US07968435B1公开(公告)日： 2011-06-28
- 发明人: Peter Deelman , Ken Elliott , David Chow
- 申请人： Peter Deelman , Ken Elliott , David Chow
- 申请人地址： US CA Malibu
- 专利权人： HRL Laboratories, LLC
- 当前专利权人： HRL Laboratories, LLC
- 当前专利权人地址： US CA Malibu
- 代理机构： Ladas & Parry
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A semiconductor device and method are being disclosed. The semiconductor device discloses an InAs layer, a plurality of group III-V ternary layers supported by the InAs layer, and a plurality of group III-V quarternary layers supported by the InAs layer, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer. The method discloses providing an InAs layer, growing a plurality of group III-V ternary layers, and growing a plurality of group III-V quarternary layers, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer and are supported by the InAs layer.