公开(公告)号：US07695564B1

公开(公告)日：2010-04-13

申请号：US11051749

申请日：2005-02-03

申请人： Miroslav Micovic ,  Peter Deelman ,  Yakov Royter

发明人： Miroslav Micovic ,  Peter Deelman ,  Yakov Royter

IPC分类号： C30B25/02

CPC分类号： H01L21/76254

摘要： The present invention is directed to a method for fabricating a thermal management substrate having a Silicon (Si) layer on a polycrystalline diamond film, or on a diamond-like-carbon (DLC) film. The method comprises acts of fabricating a separation by implantation of oxygen (SIMOX) wafer; depositing a polycrystalline diamond film onto the SIMOX wafer; and removing various layers of the SIMOX wafer to leave a Si overlay layer that is epitaxially fused with the polycrystalline diamond film. In the case of the DLC film, the method comprises acts of ion-implanting a Si wafer; depositing an amorphous DLC film onto the Si wafer; and removing various layers of the Si wafer to leave a Si overlay structure epitaxially fused with the DLC film.

摘要翻译： 本发明涉及一种用于制造在多晶金刚石膜上或在金刚石碳（DLC）膜上具有硅（Si）层的热管理基板的方法。 该方法包括通过注入氧（SIMOX）晶片制造分离的作用; 将多晶金刚石膜沉积到SIMOX晶片上; 并移除SIMOX晶片的各层以留下与多晶金刚石膜外延熔合的Si覆盖层。 在DLC膜的情况下，该方法包括离子注入Si晶片的动作; 在Si晶片上沉积非晶态DLC膜; 并去除Si晶片的各个层以留下与DLC膜外延融合的Si覆盖结构。

公开(公告)号：US07968435B1

公开(公告)日：2011-06-28

申请号：US12491004

申请日：2009-06-24

申请人： Peter Deelman ,  Ken Elliott ,  David Chow

发明人： Peter Deelman ,  Ken Elliott ,  David Chow

IPC分类号： H01L21/20

CPC分类号： H01L21/02395 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02631

摘要： A semiconductor device and method are being disclosed. The semiconductor device discloses an InAs layer, a plurality of group III-V ternary layers supported by the InAs layer, and a plurality of group III-V quarternary layers supported by the InAs layer, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer. The method discloses providing an InAs layer, growing a plurality of group III-V ternary layers, and growing a plurality of group III-V quarternary layers, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer and are supported by the InAs layer.

摘要翻译： 正在公开半导体器件和方法。 半导体器件公开了InAs层，由InAs层支撑的多个III-V族三元层和由InAs层支撑的多个III-V族第三层，其中III-V族三元层与 彼此由一个III-V组单独的三层组成。 该方法公开了提供InAs层，生长多个III-V族三元层，并生长多个III-V族第三层，其中III-V族三元层通过单组III- V第三层，并由InAs层支持。

公开(公告)号：US07598158B1

公开(公告)日：2009-10-06

申请号：US11447338

申请日：2006-06-05

申请人： Peter Deelman ,  Ken Elliott ,  David Chow

发明人： Peter Deelman ,  Ken Elliott ,  David Chow

IPC分类号： H01L21/20

CPC分类号： H01L21/02395 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02631

摘要： A semiconductor device and method are being disclosed. The semiconductor device discloses an InAs layer, a plurality of group III-V ternary layers supported by the InAs layer, and a plurality of group III-V quarternary layers supported by the InAs layer, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer. The method discloses providing an InAs layer, growing a plurality of group III-V ternary layers, and growing a plurality of group III-V quarternary layers, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer and are supported by the InAs layer.

摘要翻译： 正在公开半导体器件和方法。 半导体器件公开了InAs层，由InAs层支撑的多个III-V族三元层和由InAs层支撑的多个III-V族第三层，其中III-V族三元层与 彼此由一个III-V组单独的三层组成。 该方法公开了提供InAs层，生长多个III-V族三元层，并生长多个III-V族第三层，其中III-V族三元层通过单组III- V第三层，并由InAs层支持。

公开(公告)号：US08242538B1

公开(公告)日：2012-08-14

申请号：US13105668

申请日：2011-05-11

申请人： Peter Deelman ,  Ken Elliott ,  David Chow

发明人： Peter Deelman ,  Ken Elliott ,  David Chow

IPC分类号： H01L31/102

CPC分类号： H01L21/02395 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02631

摘要： A semiconductor device and method are being disclosed. The semiconductor device discloses an InAs layer, a plurality of group III-V ternary layers supported by the InAs layer, and a plurality of group III-V quarternary layers supported by the InAs layer, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer. The method discloses providing an InAs layer, growing a plurality of group III-V ternary layers, and growing a plurality of group III-V quarternary layers, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer and are supported by the InAs layer.

摘要翻译： 正在公开半导体器件和方法。 半导体器件公开了InAs层，由InAs层支撑的多个III-V族三元层和由InAs层支撑的多个III-V族第三层，其中III-V族三元层与 彼此由一个III-V组单独的三层组成。 该方法公开了提供InAs层，生长多个III-V族三元层，并生长多个III-V族第三层，其中III-V族三元层通过单组III- V第三层，并由InAs层支持。